| Item |
Material |
Form |
Dia. (mm) |
Thickness (um/mm) |
Orientation |
Quantity |
Surface |
Price (US$) |
Quality |
Specs. |
| 88 |
Silicon |
Wafers |
76,2 |
300 |
<111>
|
3.940 |
as cut |
2,50 |
FZ-Mat. |
40-60 Ohmcm,
lifetime> 200 usec. |
 |
| 40 |
Silicon |
Wafers |
100 |
540-580 |
<111>
|
7.500 |
lapped |
3,00 |
coin stack |
0.002-0.005 Ohmcm,
As-doped |
 |
| 43 |
Silicon |
Wafers |
100 |
525 |
<111>
|
250 |
SSP |
4,00 |
Test |
Boron, 5-20mOhm |
 |
| 41 |
Silicon |
Wafers |
101 |
370-430 |
<100>
|
24.000 |
as cut |
1,00 |
coin stack |
Flat |
 |
| 999 |
Silicon |
Wafers |
150 |
300 |
<100>
|
100 |
DSP |
30,00 |
Prime |
1-10 Ohmcm,
Phos- doped |
 |
| 36 |
Quartz |
Wafers |
100 |
520 |
fused |
160 |
SSP |
26,00 |
Test |
fused quartz, MIL 80/50 |
 |
| 59 |
Sapphire |
Blanks |
31 |
4.7mm |
Random |
90 |
as lapped |
7,00 |
Test |
Roughness 1 um |
 |
| 59 |
Sapphire |
Blanks |
36,5 |
3.6mm |
Random |
150 |
as lapped |
7,00 |
Test |
Roughness 1 um |
 |
| 61 |
Sapphire |
Blanks |
50,8 |
490 |
C-Plane |
226 |
as lapped |
21,00 |
Test |
Roughness 1 um |
 |
| 63 |
Sapphire |
Blanks |
50,8 |
550 |
C-Plane |
50 |
as lapped |
21,00 |
Test |
Roughness 1 um |
 |
| 62 |
Sapphire |
Blanks |
- |
35.6x28.6x6.0 |
Random |
46 |
as lapped |
18,00 |
Test |
Roughness 1 um |
 |
| 15 |
Sapphire |
Windows |
- |
16.9x13.7x1.1 |
C-Plane |
70 |
DSP |
20,00 |
|
MIL 80/50 |
 |
| 78 |
Sapphire |
Wafers |
50,8 |
330 |
C-Plane |
30 |
SSP |
30,00 |
|
MIL 80/50 |
 |
| 86 |
Sapphire |
Wafers |
50,8 |
340 |
C-Plane |
12 |
SSP |
30,00 |
|
MIL 80/50 |
 |
| 7 |
Sapphire |
Wafers |
50,8 |
460 |
C-Plane |
12 |
SSP |
30,00 |
|
MIL 80/50 |
 |
|
|